Course Outline

Introduction

  • Overview of semiconductors for government applications

Materials Properties and Doping

  • Transition from energy levels to energy bands
  • Characteristics of crystalline, polycrystalline, and amorphous semiconductors
  • Miller indices for material identification
  • Properties of common semiconductors used in government technologies
  • Behavior of free carriers in semiconductors

Rudiments of Quantum Mechanics

  • Interpretation of the wave equation
  • Principles of quantum confinement
  • Phenomena of quantum tunneling and reflection
  • Analysis of electron waves in crystalline structures
  • Calculation of density of states

Equilibrium Carrier Concentration

  • Understanding the Fermi function and its implications
  • Evaluation of Fermi-Dirac integrals
  • Relationship between Fermi level and carrier concentration
  • Impact of doping density on carrier concentration
  • Influence of temperature on carrier concentration

Carrier Transport, Generation, and Recombination

  • Application of the Landauer approach in transport theory
  • Current flow from nanoscale to macroscale perspectives
  • Drift-diffusion equation for carrier movement
  • Mechanisms of carrier recombination and generation

The Semiconductor Equations

  • Mathematical formulation of semiconductor behavior
  • Construction and interpretation of energy band diagrams
  • Concept and application of quasi-Fermi levels
  • Formulation and solution of the minority carrier diffusion equation

Summary and Next Steps

Requirements

  • Knowledge of Physics, Chemistry, and Mathematics for government applications
  • Understanding of semiconductors
  • Proficiency with basic differential equations

Audience

  • Electrical engineers for government projects
  • Individuals interested in semiconductor technology for government use
 35 Hours

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